Advanced amorphous silicon thin-film transistors for AM-OLEDs: Electrical performance and stability

被引：20

作者：

Kuo, Alex ^{[1
]}

Won, Tae Kyung ^{[2
]}

Kanicki, Jerzy ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Organ & Mol Elect Lab, Ann Arbor, MI 48109 USA

[2] AKT Amer Inc, Santa Clara, CA 95054 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 07期

关键词：

advanced amorphous silicon thin-film transistor (a-Si : H TFT); bias temperature stress (BTS); biasing condition; circuit stability; current temperature stress (CTS);

D O I：

10.1109/TED.2008.924047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated and characterized the advanced amorphous silicon thin-film transistors with a bilayer structure for both the active and gate dielectric films. The electrical field across the gate insulator has a significant influence on the device threshold voltage electrical stability. We show that high thin-film transistor stability can be achieved even under the presence of a high channel current. Its electrical and high-temperature stability improves up to a factor of five when the TFT biasing condition changes from the linear to the saturation region of operation.

引用

页码：1621 / 1629

页数：9

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