Phosphonated graphene oxide with high electrocatalytic performance for vanadium redox flow battery

被引:49
|
作者
Etesami, Mohammad [1 ,2 ]
Abouzari-Lotf, Ebrahim [2 ,3 ]
Ripin, Adnan [2 ,3 ]
Nasef, Mohamed Mahmoud [2 ,4 ,5 ]
Ting, Teo M. [6 ]
Saharkhiz, Azam [3 ]
Ahmad, Arshad [2 ,3 ]
机构
[1] Case Western Reserve Univ, Dept Macromol Sci & Engn, 10900 Euclid Ave, Cleveland, OH 44106 USA
[2] Univ Teknol Malaysia, Inst Future Energy, Ctr Hydrogen Energy, Adv Mat Res Grp, Kuala Lumpur 54100, Malaysia
[3] Univ Teknol Malaysia, Dept Chem Engn, Johor Baharu 81310, Malaysia
[4] Univ Teknol Malaysia, Malaysia Japan Int Inst Technol, Kuala Lumpur 54100, Malaysia
[5] Univ Teknol Petronas, Dept Chem Engn, Seri Iskandar 32610, Perak, Malaysia
[6] Agensi Nuklear Malaysia, Radiat Proc Technol Div, Kajang, Malaysia
关键词
Vanadium redox battery; Electrocatalyst; Phosphonated graphene oxide; Carbon felt; CARBON-FELT ELECTRODE; ENERGY-STORAGE; VO2+/VO2+; SHEETS; LAYER;
D O I
10.1016/j.ijhydene.2017.11.050
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Development of more efficient electrodes is essential to improve the competitiveness of vanadium redox flow battery (VRFB) systems. Covalent functionalization of carbon structure in graphene oxide with phosphonic acid groups was carried out to enhance the electrode wettability. The phosphonated graphene oxide (P-GO) was characterized and found displaying an improved electrocatalytic performance towards electrooxidation/ electroreduction of vanadium ion pairs. The defect in P-GO structure increased the negative charge density on the surface leading to higher vanadium ions tendency for electro-oxidation/electroreduction reactions. The battery performance was evaluated using electrodes made of carbon felt hosted GO and P-GO in a single cell VRFB and 180 charge discharge cycles were recorded. The VRFB with P-GO displayed an improved performance and stable coulombic, voltage and energy efficiency compared to VRFB with GO. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:189 / 197
页数:9
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