The effect of orientation on structure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films

被引：15
|
作者：
Kim, KT [1 ]
Kim, CI [1 ]
机构：
[1] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
来源：
SURFACE & COATINGS TECHNOLOGY | 2004年 / 177卷
关键词：
BLT; thin film; metalorganic decomposition; ferroelectric random access memory; orientation;
D O I：
10.1016/j.surfcoat.2003.08.020
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We have investigated the structure and ferroelectric properties of the Bi3.25La0.75Ti3O12 (BLT) thin films on Pt(1 1 1)/Ti/SiO2/Si substrate fabricated by a metalorganic decomposition deposition. The BLT films were grown with various pyrolysis processing conditions used in the film process. Both the grain growth behavior and ferroelectric properties such as remanent polarization were found to be dependent on various orientations of the BLT thin films. As a result, the highly random oriented BLT thin films exhibited higher remanent polarization (2P(r) = 37.6 muC/cm(2)) compared with (1 1 7)-oriented BLT thin films (2P(r), = 30.3 muC/cm(2)). At the same time, the (0 0 1)-oriented BLT thin films are characterized by the lowest polarization (2P(r), = 7.7 muC/cm(2)). (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：770 / 773
页数：4
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