Analysis of bipolar linear circuit response mechanisms for high and low dose rate total dose irradiations

被引：28
|
作者：
Barnaby, H
Tausch, HJ
Turfler, R
Cole, P
Baker, P
Pease, RL
机构：
[1] NSWC CRANE,CRANE,IN
[2] RLP RES,ALBUQUERQUE,NM
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期
关键词：
D O I：
10.1109/23.556903
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A methodology is presented for the identification of circuit total dose response mechanisms in bipolar linear microcircuits irradiated at high and low dose rates. This methodology includes manual circuit analysis, circuit simulations with SPICE using extracted device parameters, and selective irradiations of portions of the circuit using a scanning electron microscope.
引用
收藏
页码：3040 / 3048
页数：9
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