Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current

被引：3

作者：

Yin, You ^{[1
]}

Wang, Tao ^{[2
]}

机构：

[1] Gunma Univ, Fac Sci & Technol, Div Elect & Informat, Kiryu, Gunma 3768515, Japan

[2] Zhejiang Univ, Coll Elect Engn, Hangzhou 130025, Zhejiang, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 07期

关键词：

Low reset current; nanostructure; phase-change memory (PCM); RANDOM-ACCESS MEMORY; FILMS;

D O I：

10.1109/TED.2015.2429689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we intensively investigated the proposed nanocontact phase-change memory (nano-C PCM) with incorporated nanostructures and high-resistivity nanolayer (nano-L) for reducing reset current. The high resistivity was able to be tuned by doping N into the conventional Ge2Sb2Te5 phase-change material. The analysis based on finite-element method exhibited that the current density in the nano-C PCM could be locally enhanced to about two times that of both conventional and nano-L PCM devices. This resulted in the localization of Joule heating in the nano-C PCM, making it have the highest temperature at the same programming current among the three types of PCM devices. Reset current of nano-C PCM could be greatly reduced to 8.2% of that of the conventional one, owing to its high-efficiency heating for amorphization.

引用

页码：2184 / 2189

页数：6

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