Depletion-mode GaAs MOSFETs with negligible drain current drift and hysteresis

被引：12

作者：

Wang, YC ^{[1
]}

Hong, M ^{[1
]}

Kuo, JM ^{[1
]}

Mannaerts, JP ^{[1
]}

Kwo, J ^{[1
]}

Tsai, HS ^{[1
]}

Krajewski, JJ ^{[1
]}

Chen, YK ^{[1
]}

Cho, AY ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746248

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, depletion-mode GaAs MOSFETs with undetectable hysteresis and negligible drain current drift I-V characteristics were successfully fabricated using MBE grown Ga2O3(Gd2O3) as the gate oxide. The absence of drain current drift and hysteresis is a significant advance towards the manufacture of commercially useful GaAs MOSFETs.

引用

页码：67 / 70

页数：4

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