Nanocrystalline Metal Oxide Gate AlGaN/GaN HEMT for Detection of CO Gas

被引：5

作者：

Eliza, Sazia A. ^{[1
]}

Olah, Robert ^{[1
]}

Dutta, Achyut K. ^{[1
]}

机构：

[1] Banpil Photon Inc, Santa Clara, CA 95054 USA

来源：

NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2010年 / 2卷 / 02期

关键词：

CO Detection; AlGaN/GaN HEMT; Nanocrystalline SnO(2); Sub-ppm Detection; Extreme Environment Sensor; SENSORS; CATALYST; FILMS;

D O I：

10.1166/nnl.2010.1071

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This paper presents a robust sensor to detect low concentration (< 1 ppm) of CO gas. The sensor is based on AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor (MOSHEMT) with a non-conventional gate structure. The performance of the device has been simulated based on the charge control physics of AlGaN/GaN heterostructure transistor. Large sensitivities and widely linear characteristics are obtained for the AlGaN/GaN device based sensor assuming ideal gas-surface kinetics which can be approximated by the proposed gate structure. The sensor generates 0.8 mu A of current for 0.5 ppm concentration of CO. The sensor shows linear characteristics for concentration of 1000 ppm CO. The effects of varying aspect ratio on total changes in current, sensitivity and linearity of the device have been simulated.

引用

页码：139 / 143

页数：5

共 17 条

[1] Fundamental and practical aspects in the design of nanoscaled SnO2 gas sensors:: a status report [J].