CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

被引：147

作者：

Chowdhury, Srabanti ^{[1
]}

Wong, Man Hoi ^{[1
]}

Swenson, Brian L. ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2012年 / 33卷 / 01期

关键词：

AlGaN/GaN; current-aperture vertical electron transistor (CAVET); Mg-implanted; plasma-MBE; FIELD-EFFECT TRANSISTORS; HEMTS; ENHANCEMENT; VOLTAGE; MG;

D O I：

10.1109/LED.2011.2173456

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A current aperture vertical electron transistor (CAVET) with a Mg-ion-implanted current blocking layer (CBL) and a channel regrown by plasma assisted molecular beam epitaxy (MBE), is successfully demonstrated on bulk GaN to work as a high voltage device. The fabrication of the device combined a drift region grown by metalorganic chemical vapor deposition (MOCVD), to hold the blocking voltage, with AlGaN/GaN layers regrown by plasma-MBE to conduct current. The device registered a maximum current of 4 kA.cm(-2) under direct-current operation offering a specific ON-state resistance R-on - A of 2.2 m Omega . cm(2). With 80 mu s pulses applied to the gate, the devices showed no dispersion. The increased aperture length Lap resulted in the decrease in specific R-on, as expected. The impact of the gate overlap to aperture L-go on the leakage current was studied, where the leakage current was found to increase with a smaller overlap.

引用

页码：41 / 43

页数：3

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