Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

被引：60

作者：

Liu, Z. H. ^{[1
,2
]}

Ng, G. I. ^{[1
,2
]}

Arulkumaran, S. ^{[2
]}

Maung, Y. K. T. ^{[2
]}

Zhou, H. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Temasek Labs, Singapore 637553, Singapore

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 16期

关键词：

ALGAN/GAN HEMTS; LEAKAGE CURRENT; AL2O3; CONDUCTION; MECHANISM; SILICON;

D O I：

10.1063/1.3573794

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanisms of the temperature-dependent forward gate current transport in the atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT) were investigated. In contrast to the conventional Schottky-gate AlGaN/GaN HEMT, thermionic field emission was found not to be the dominant transport mechanism for the Al2O3/AlGaN/GaN MISHEMT. Fowler-Nordheim tunneling was found to be dominant at low temperature (T < 0 degrees C) and high electrical filed, whereas trap assistant tunneling was found to be dominant at medium electrical field and high temperature (T > 0 degrees C). (C) 2011 American Institute of Physics. [doi:10.1063/1.3573794]

引用

页数：3

共 17 条

[1] Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg [J].

Chang, Man ;

Jo, Minseok ;

Jung, Seungjae ;

Lee, Joonmyoung ;

Jeon, Sanghun ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2009, 94 (26)

[2] Mechanism of anomalous current transport in n-type GaN Schottky contacts [J].

Hasegawa, H ;

Oyama, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04) :1647-1655

[3] Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric [J].

Hashizume, T ;

Ootomo, S ;

Hasegawa, H .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2952-2954

[4] On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs [J].

Karmalkar, S ;

Satyan, N ;

Sathaiya, DM .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (02) :87-89

[5] Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon [J].

Kolodzey, J ;

Chowdhury, EA ;

Adam, TN ;

Qui, GH ;

Rau, I ;

Olowolafe, JO ;

Suehle, JS ;

Chen, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) :121-128

[6] High-power SiO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors -: art. no. 143501 [J].

Kordos, P ;

Heidelberger, G ;

Bernát, J ;

Fox, A ;

Marso, M ;

Lüth, H .

APPLIED PHYSICS LETTERS, 2005, 87 (14) :1-3

[7] Improved Linearity for Low-Noise Applications in 0.25-μm GaN MISHEMTs Using ALD Al2O3 as Gate Dielectric [J].

Liu, Z. H. ;

Ng, G. I. ;

Arulkumaran, S. ;

Maung, Y. K. T. ;

Teo, K. L. ;

Foo, S. C. ;

Sahmuganathan, V. .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (08) :803-805

[8] Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator [J].

Liu, Z. H. ;

Ng, G. I. ;

Arulkumaran, S. ;

Maung, Y. K. T. ;

Teo, K. L. ;

Foo, S. C. ;

Sahmuganathan, V. .

APPLIED PHYSICS LETTERS, 2009, 95 (22)

[9] High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD [J].

Liu, Zhi Hong ;

Ng, Geok Ing ;

Arulkumaran, Subramaniam ;

Maung, Ye Kyaw Thu ;

Teo, Khoon Leng ;

Foo, Siew Chuen ;

Sahmuganathan, Vicknesh ;

Xu, Tao ;

Lee, Chee How .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (02) :96-98

[10] Insulator engineering in GaN-based MIS HFETs [J].

Maeda, Narihiko ;

Hirokia, Masanobu ;

Watanabe, Noriyuki ;

Oda, Yasuhiro ;

Yokoyania, Haruki ;

Yagi, Takuma ;

Makinioto, Toshiki ;

Enokia, Takatoino ;

Kobayashi, Takashi .

GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473

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