Structure and formation of H-induced (111) platelets in Si

被引:1
作者
Kim, YS [1 ]
Chang, KJ [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Phys, Yusung Ku, Taejon 305701, South Korea
来源
PHYSICA B | 2001年 / 302卷
关键词
silicon; hydrogen; platelets;
D O I
10.1016/S0921-4526(01)00436-7
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We investigate the energetics of various structures for H-induced (1 1 1) platelets in Si through first-principles pseudopotential calculations. The formation energies are calculated as a function of lattice dilation along the [1 I I] direction. We find that a double-layer-H-2(*) structure is most stable in the absence of lattice dilation, while as dilation increases, an H-saturated Si(1 1 1) internal surface structure ([2Si-H](n)) is stabilized, accompanied with the generation of H-2 molecules. For the [2Si-H](n) structure with H-2 molecules in the void, calculated dilation length, internal pressure, and H-vibrational frequencies are in good agreements with experiments. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:244 / 248
页数:5
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