Characteristics of bismuth-based thin films deposited directly on polymer substrates for embedded capacitor application

被引：4

作者：

Ahn, Jun-Ku ^{[1
]}

Kim, Hae-Won ^{[1
]}

Ahn, Kyung-Chan ^{[1
]}

Yoon, Soon-Gil ^{[1
]}

Son, Seung-Hyun ^{[2
]}

Jung, Hyung-Mi

Moon, Jin-Suck ^{[2
]}

Jin, Hyun-Joo ^{[2
]}

Lee, Seung-Eun ^{[2
]}

Lee, Jeong-Won ^{[2
]}

Chung, Yeoul-Kyo ^{[2
]}

Oh, Yong-Soo ^{[2
]}

机构：

[1] Chungnam Natl Univ, Sch Nano Sci & Technol, Taejon 305764, South Korea

[2] Samsung Electro Mech Co LTD, Suwon, South Korea

来源：

INTEGRATED FERROELECTRICS | 2007年 / 95卷

关键词：

BMN; embedded capacitor; polymer substrates;

D O I：

10.1080/10584580701759262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

B2Mg2/3Nb4/3O7 (BMN) thin films were deposited at low temperature (< 200 degrees C) on Copper Clad Laminates (CCL) with various Ar/O-2 flow ratios and film thicknesses by sputtering system. 200 inn-thick BMN thin films were deposited at Ar/O-2 = 10 : 10 had rms roughness of 54.3 angstrom, capacitance density of 155 nF/cm(2) at 100 kHz, dissipation factor of 0.017 and leakage current density of similar to 10(-5) at 3 V. Surface roughness of the BMN thin films increased a little with increasing the film thickness. However leakage current density decreased and the dielectric constant of that was maintained at 40.

引用

页码：187 / 195

页数：9

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