Black Phosphorus Optoelectronic Devices

被引:0
作者
Chen, Xiaolong [1 ]
Xia, Fengnian [1 ]
机构
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06511 USA
来源
MICRO- AND NANOTECHNOLOGY SENSORS, SYSTEMS, AND APPLICATIONS IX | 2017年 / 10194卷
关键词
two-dimensional material; Black phosphorus; anisotropic properties; radio-frequency transistor; photodetector; bandgap tuning; large-area synthesis; FIELD-EFFECT TRANSISTORS; ELECTRIC-FIELD; GAS; PHOTODETECTOR; PASSIVATION; MOBILITY; FILMS; MOS2;
D O I
10.1117/12.2263244
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Black phosphorus recently emerged as a promising two-dimensional material due to its widely tunable and direct bandgap, high carrier mobility and remarkable in-plane anisotropic electrical, optical and phonon properties. It serendipitously bridges the zero-gap graphene and the relatively large-bandgap transition metal dichalcogenides such as molybdenum disulfide (MoS2). In this brief review manuscript, we will first cover the basic properties of few-layer and thin-film black phosphorus. Then we will present a few potential applications of black phosphorus such as radiofrequency transistors and wideband photodetectors. Finally we will discuss the recent observation of efficient bandgap tuning in black phosphorus thin films in a dual-gate transistor, and conclude with the discussion of synthesis of large area and high quality black phosphorus thin films.
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页数:8
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