Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

被引：32

作者：

Craft, H. S. ^{[1
]}

Collazo, R. ^{[1
]}

Losego, M. D. ^{[1
]}

Mita, S. ^{[1
]}

Sitar, Z. ^{[1
]}

Maria, J.-P. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27603 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 07期

关键词：

12;

D O I：

10.1063/1.2785022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2 +/- 0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior. (C) 2007 American Institute of Physics.

引用

页数：4

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