Tunnel Field Effect Transistor With Raised Germanium Source

被引：134

作者：

Kim, Sung Hwan ^{[1
]}

Agarwal, Sapan ^{[1
]}

Jacobson, Zachery A. ^{[1
]}

Matheu, Peter ^{[1
]}

Hu, Chenming ^{[1
]}

Liu, Tsu-Jae King ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 10期

关键词：

Band-to-band tunneling (BTBT); germanium (Ge) source; raised source; tunnel field effect transistor (TFET);

D O I：

10.1109/LED.2010.2061214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of a tunnel field effect transistor (TFET) with a raised germanium (Ge) source region is investigated via 2-D device simulation with a tunneling model calibrated to experimental data. The comparison of various Ge-source TFET designs shows that a fully elevated Ge-source design provides for the steepest subthreshold swing and, therefore, the largest ON-state drive current for low-voltage operation. Mixed-mode (dc and ac) simulations are used to assess the energy-delay performance. In comparison with a MOSFET, an optimized Ge-source TFET is projected to provide for a lower energy per operation for throughput in the frequency range of up to similar to 1 GHz for sub-0.5-V operation.

引用

页码：1107 / 1109

页数：3

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