NEXAFS study on substrate temperature dependence of DLC films formed by Ar cluster ion beam assisted deposition

For the optimization of the synthesis condition of the production of diamond-like carbon (DLC) thin films by Ar gas cluster ion beam (GCIB) assisted deposition of fullerene, the local structure of DLC thin films was investigated by measuring near-edge X-ray absorption fine structure spectra of the carbon K-edge over the excitation energy range 275-320 eV, using synchrotron radiation. The DLC thin films were formed by GCIB assisted deposition at substrate temperatures ranging from room temperature to 250 degreesC. The sp(2) content estimated from the analysis of the peak corresponding to the transition of the excitation electron from a carbon 1s orbital to a pi* orbital was found to increase with the substrate temperature during GCIB assisted deposition. (C) 2003 Elsevier Science B.V. All rights reserved.