Hall mobility of the electron inversion layer in 6H-SiC MOSFETs

被引：22
作者：
Saks, NS
Mani, SS
Agarwal, AK
Hegde, VS
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Northrop Grumman Corp, Pittsburgh, PA USA
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
charge-sheet model; Hall effect; interface trap; inversion layer; mobility; MOS;
D O I：
10.4028/www.scientific.net/MSF.338-342.737
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Electron mobility and free carrier density have been measured in 6H-SiC MOS inversion layers using the Hall effect to study unexpectedly low transconductance in SiC MOSFETs. We find that the Hall mobility can be much larger than the effective mobility extracted from transconductance data. In addition, the actual free electron density is found to be smaller than predicted by the charge-sheet model, which is caused by substantial electron trapping at the SiC/SiO2 interface.
引用
收藏
页码：737 / 740
页数：4
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