Optimisation of the dislocation filter layers in 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates

被引:19
作者
Tang, Mingchu [1 ]
Wu, Jiang [1 ]
Chen, Siming [1 ]
Jiang, Qi [1 ]
Seeds, Alwyn J. [1 ]
Liu, Huiyun [1 ]
Dorogan, Vitaliy G. [2 ]
Benamara, Mourad [2 ]
Mazur, Yuriy [2 ]
Salamo, Gregory [2 ]
机构
[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England
[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
基金
英国工程与自然科学研究理事会;
关键词
SILICON; SUPERLATTICES; DIODES; GAAS;
D O I
10.1049/iet-opt.2014.0078
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report 1.3-mu m InAs/GaAs quantum-dot (QD) lasers monolithically grown on a Si substrate by optimising the dislocation filter layers (DFLs). InAlAs/GaAs strained layer superlattices (SLSs) have been presented as DFLs in this study. A distinct improvement in the InAs/GaAs QDs was observed when using InAlAs/GaAs SLSs because of the effective filtering of threading dislocations. Consequently, a laser with a threshold current density of 194 A/cm(2) at room temperature and an operating temperature as high as 85 degrees C is successfully demonstrated. These results show the potential for integrating III-V QD materials on a Si platform via InAlAs/GaAs SLSs as DFL.
引用
收藏
页码:61 / 64
页数:4
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