Analysis of the influence of disk and wafer rotation speed on the SiO2 thin-film characteristics in a space-divided PE-ALD system

被引：3

作者：

Lee, Baek-Ju ^{[1
]}

Seo, Dong-Won ^{[1
]}

Choi, Jae-Wook ^{[1
]}

机构：

[1] Hanwha Corp, Adv Technol TF, Vacuum Equipment R&D Div, Seongnam 305, Pangyo Ro, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2021年 / 79卷 / 07期

关键词：

PE-ALD; SiO2; Deposition rate; WER; Uniformity; Disk speed;

D O I：

10.1007/s40042-021-00258-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A space-divided plasma-enhanced atomic layer deposition (PE-ALD) system in which disk and wafer rotate at the same time was developed. In the space-divided PE-ALD system, the disk and the wafer are each independently rotated and deposited. It has the advantage that high productivity and dispersion can be improved by controlling the rotation speed of the disk and wafer. Also, it can be applied to various processes by changing the design of the upper lid slightly. In this study, a study on the deposition characteristics of SiO2 thin films was conducted using the developed spatially divided PE-ALD system. The effect of the rotation speed of the disk and wafer on the deposition rate and the uniformity characteristics of the SiO2 thin film was confirmed, and a study on the correlation with the wet etch rate was conducted.

引用

页码：638 / 647

页数：10

共 13 条

[1] Bernhardt H, 2012, MATER SCI ENG, V41, P53
[2] Area-Selective Atomic Layer Deposition Assisted by Self-Assembled Monolayers: A Comparison of Cu, Co, W, and Ru
Bobb-Semple, Dara
Nardi, Katie Lynn
Draeger, Nerissa
Hausmann, Dennis M.
Bent, Stacey F.
[J]. CHEMISTRY OF MATERIALS, 2019, 31 (05) : 1635 - 1645
[3] Choi KH., 2018, J KOREA I MAT ENG, V13, P51
[4] Collins TM, 2017, INT J HUM RIGHTS, V21, P14, DOI 10.1080/13642987.2016.1248122
[5] Fuhua Y, 2020, J SEMICONDUCT, V30, P124
[6] Kerte ZF., 2015, J RADIOANAL NUCL CH, V21, P118
[7] PERFORMANCE IMPROVEMENT OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH SIO2 GATE INSULATOR BY N-2 PLASMA TREATMENT
KIM, JH
OH, EY
AHN, BC
KIM, D
JANG, J
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (06) : 775 - 776
[8] Plasma-Enhanced Atomic Layer Deposition Processed SiO2 Gate Insulating Layer for High Mobility Top-Gate Structured Oxide Thin-Film Transistors
Ko, Jong Beom
Yeom, Hye In
Park, Sang-Hee Ko
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (01) : 39 - 42
[9] Madaan, 2013, SURF SCI, V20, P26
[10] Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor
Nam, Taewook
Lee, Hyunho
Choi, Taejin
Seo, Seunggi
Yoon, Chang Mo
Choi, Yunjung
Jeong, Heonjong
Lingam, Hima K.
Chitturi, Venkateswara R.
Korolev, Andrey
Ahn, Jong-Hyun
Kim, Hyungjun
[J]. APPLIED SURFACE SCIENCE, 2019, 485 : 381 - 390

← 1 2 →