Analysis of the influence of disk and wafer rotation speed on the SiO2 thin-film characteristics in a space-divided PE-ALD system

被引：3

作者：

Lee, Baek-Ju ^{[1
]}

Seo, Dong-Won ^{[1
]}

Choi, Jae-Wook ^{[1
]}

机构：

[1] Hanwha Corp, Adv Technol TF, Vacuum Equipment R&D Div, Seongnam 305, Pangyo Ro, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2021年 / 79卷 / 07期

关键词：

PE-ALD; SiO2; Deposition rate; WER; Uniformity; Disk speed;

D O I：

10.1007/s40042-021-00258-0

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A space-divided plasma-enhanced atomic layer deposition (PE-ALD) system in which disk and wafer rotate at the same time was developed. In the space-divided PE-ALD system, the disk and the wafer are each independently rotated and deposited. It has the advantage that high productivity and dispersion can be improved by controlling the rotation speed of the disk and wafer. Also, it can be applied to various processes by changing the design of the upper lid slightly. In this study, a study on the deposition characteristics of SiO2 thin films was conducted using the developed spatially divided PE-ALD system. The effect of the rotation speed of the disk and wafer on the deposition rate and the uniformity characteristics of the SiO2 thin film was confirmed, and a study on the correlation with the wet etch rate was conducted.

引用

页码：638 / 647

页数：10

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