Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

被引：73

作者：

Liao, Chih-Teng ^{[1
]}

Tsai, Miao-Chan ^{[2
]}

Liou, Bo-Ting ^{[3
]}

Yen, Sheng-Horng ^{[4
]}

Kuo, Yen-Kuang ^{[5
]}

机构：

[1] Natl Chiao Tung Univ, Coll Photon, Inst Lighting & Energy Photon, Tainan 711, Taiwan

[2] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

[3] Hsiuping Inst Technol, Dept Mech Engn, Taichung 41283, Taiwan

[4] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan

[5] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 108卷 / 06期

关键词：

SEMIPOLAR GAN TEMPLATES; OPTICAL-PROPERTIES; BAND PARAMETERS; SEMICONDUCTORS; SAPPHIRE; LAYER; EMISSION; EPITAXY; FIELDS; LASERS;

D O I：

10.1063/1.3471804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Staggered quantum well structures are studied to eliminate the influence of polarization-induced electrostatic field upon the optical performance of blue InGaN light-emitting diodes (LEDs). Blue InGaN LEDs with various staggered quantum wells which vary in their indium compositions and quantum well width are theoretically studied and compared by using the APSYS simulation program. According to the simulation results, the best optical characteristic is obtained when the staggered quantum well is designed as In(0.20)Ga(0.80)N (1.4 nm)-In(0.26)Ga(0.74)N (1.6 nm) for blue LEDs. Superiority of this novelty design is on the strength of its enhanced overlap of electron and hole wave functions, uniform distribution of holes, and suppressed electron leakage in the LED device. (C) 2010 American Institute of Physics. [doi:10.1063/1.3471804]

引用

页数：6

共 55 条

[1] Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes [J].

Arif, Ronald A. ;

Zhao, Hongping ;

Ee, Yik-Khoon ;

Tansu, Nelson .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (5-6) :573-580

[2] Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes [J].

Arif, Ronald A. ;

Ee, Yik-Khoon ;

Tansu, Nelson .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[3] Type-II InGaN-GaNAs quantum wells for lasers applications [J].

Arif, Ronald A. ;

Zhao, Hongping ;

Tansu, Nelson .

APPLIED PHYSICS LETTERS, 2008, 92 (01)

[4] Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures [J].

Barletta, Philip T. ;

Berkman, E. Acar ;

Moody, Baxter F. ;

El-Masry, Nadia A. ;

Emara, Ahmed M. ;

Reed, Mason J. ;

Bedair, S. M. .

APPLIED PHYSICS LETTERS, 2007, 90 (15)

[5]

BERNARDINI F, 2007, NITRIDE SEMICONDUCTO, P4968

[6] Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates [J].

Chakraborty, A ;

Baker, TJ ;

Haskell, BA ;

Wu, F ;

Speck, JS ;

Denbaars, SP ;

Nakamura, S ;

Mishra, UK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32) :L945-L947

[7] Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

DenBaars, SP ;

Nakamura, S ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5143-5145

[8] Nitride-based flip-chip ITO LEDs [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Lee, CT ;

Chen, WS ;

Shen, CF ;

Hsu, YP ;

Shei, SC ;

Lo, HM .

IEEE TRANSACTIONS ON ADVANCED PACKAGING, 2005, 28 (02) :273-277

[9] Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layer [J].

Chang, YA ;

Luo, CY ;

Ku, HC ;

Kuo, YK ;

Lin, CF ;

Wang, SC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (11) :7916-7918

[10] Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Song, JJ ;

Keller, S ;

Minsky, MS ;

Hu, E ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1128-1130

← 1 2 3 4 5 6 →