Realization of quantized anomalous Hall effect by inserting CrI3layer in Bi2Se3film

被引：4
作者：
Chen, Li [1 ,2 ]
Shi, Changmin [2 ]
Jiang, Chuan [3 ]
Liu, Hongmei [2 ]
Cui, Guangliang [2 ]
Wang, Dongchao [2 ]
Li, Xiaolong [2 ]
Gao, Kefu [2 ]
Zhang, Xiaoming [4 ]
机构：
[1] Qilu Univ Technol, Sch Elect Informat, Dept Phys, Jinan 250353, Shandong, Peoples R China
[2] Linyi Univ, Inst Condensed Matter Phys, Linyi 276000, Shandong, Peoples R China
[3] Natl Instruments, Dept Data Acquisit, Shanghai 201204, Peoples R China
[4] Shandong Univ, Natl Glycoengn Res Ctr, Qingdao 266237, Shandong, Peoples R China
来源：
NEW JOURNAL OF PHYSICS | 2020年 / 22卷 / 07期
基金：
中国国家自然科学基金;
关键词：
quantum anomalous Hall effect; nonzero Chern number; first-principles calculations; magnetizing topological surface states; FERROMAGNETISM; NANOSHEETS; CRYSTAL; STATE;
D O I：
10.1088/1367-2630/ab9201
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It is challenging to realize the quantum anomalous Hall effect (QAHE) at high operating temperatures using the two-dimensional (2D) Dirac surface states of three-dimensional (3D) topological insulators (TIs). Given the small non-trivial gap induced by adsorbing ferromagnetic (FM) CrI(3)monolayer (ML) on the surface of Bi(2)Se(3)films, we here propose another TI and FM semiconductor interfaced system to enhance the gap by inserting CrI3ML between the first top (bottom) quintuple layers (QL) and sub-top (sub-bottom) QL of Bi(2)Se(3)films symmetrically. The 2D non-trivial phase emerges in the Bi(2)Se(3)films with five or more QLs and the gap is enlarged to 30 meV in 1QL-Bi2Se3/CrI3/4QL-Bi2Se3/CrI3/1QL-Bi2Se3, which can be understood by the enhanced magnetic proximity effect. The topological non-triviality is confirmed by the nonzero Chern number and the existence of chiral edge state. Our finding will provide useful guidance to optimize the Bi2Se3-CrI(3)interface system for realizing QAHE at relatively high operating temperatures.
引用
收藏
页数：7
相关论文
共 33 条
  • [11] Herath U, 2019, ARXIV190611387V1
  • [12] Magnetizing topological surface states of Bi2Se3 with a CrI3 monolayer
    Hou, Yusheng
    Kim, Jeongwoo
    Wu, Ruqian
    [J]. SCIENCE ADVANCES, 2019, 5 (05)
  • [13] Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit
    Huang, Bevin
    Clark, Genevieve
    Navarro-Moratalla, Efren
    Klein, Dahlia R.
    Cheng, Ran
    Seyler, Kyle L.
    Zhong, Ding
    Schmidgall, Emma
    McGuire, Michael A.
    Cobden, David H.
    Yao, Wang
    Xiao, Di
    Jarillo-Herrero, Pablo
    Xu, Xiaodong
    [J]. NATURE, 2017, 546 (7657) : 270 - +
  • [14] CrXTe3 (X = Si, Ge) nanosheets: two dimensional intrinsic ferromagnetic semiconductors
    Li, Xingxing
    Yang, Jinlong
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (34) : 7071 - 7076
  • [15] Ultrathin nanosheets of CrSiTe3: a semiconducting two-dimensional ferromagnetic material
    Lin, Ming-Wei
    Zhuang, Houlong L.
    Yan, Jiaqiang
    Ward, Thomas Zac
    Puretzky, Alexander A.
    Rouleau, Christopher M.
    Gai, Zheng
    Liang, Liangbo
    Meunier, Vincent
    Sumpter, Bobby G.
    Ganesh, Panchapakesan
    Kent, Paul R. C.
    Geohegan, David B.
    Mandrus, David G.
    Xiao, Kai
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (02) : 315 - 322
  • [16] Massive Dirac surface states in topological insulator/magnetic insulator heterostructures
    Luo, Weidong
    Qi, Xiao-Liang
    [J]. PHYSICAL REVIEW B, 2013, 87 (08):
  • [17] Coupling of Crystal Structure and Magnetism in the Layered, Ferromagnetic Insulator CrI3
    McGuire, Michael A.
    Dixit, Hemant
    Cooper, Valentino R.
    Sales, Brian C.
    [J]. CHEMISTRY OF MATERIALS, 2015, 27 (02) : 612 - 620
  • [18] ABSENCE OF FERROMAGNETISM OR ANTIFERROMAGNETISM IN ONE- OR 2-DIMENSIONAL ISOTROPIC HEISENBERG MODELS
    MERMIN, ND
    WAGNER, H
    [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (22) : 1133 - &
  • [19] wannier90: A tool for obtaining maximally-localised Wannier functions
    Mostofi, Arash A.
    Yates, Jonathan R.
    Lee, Young-Su
    Souza, Ivo
    Vanderbilt, David
    Marzari, Nicola
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 2008, 178 (09) : 685 - 699
  • [20] Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects
    Otrokov, M. M.
    Menshchikova, T. V.
    Vergniory, M. G.
    Rusinov, I. P.
    Vyazovskaya, A. Yu
    Koroteev, Yu M.
    Bihlmayer, G.
    Ernst, A.
    Echenique, P. M.
    Arnau, A.
    Chulkov, E. V.
    [J]. 2D MATERIALS, 2017, 4 (02):
1234