Effect of defects on room-temperature ferromagnetism in Co and Na co-doped ZnO

The role of defects in the room temperature ferromagnetism of the Co-ZnO based diluted magnetic semiconductor (DMS) was investigated by co-doping the DMS with Na. The structure characterizations indicate that both Na and Co ions enter into the ZnO lattice without the formation of secondary phase. The oxygen vacancy of ZnCoNaO increased while the carrier concentration decreased compared with that of ZnCoO, leading to the enhancement of the ferromagnetic property in the ZnCoNaO. The observed ferromagnetism introduced by Na ions is attributed to the exchange interaction via the electron trapped oxygen vacancies coupled with the magnetic Co ions.