High-speed low-noise p-i-n InGaAs photoreceiver at 2-μm wavelength

被引：23

作者：

Joshi, Abhay ^{[1
]}

Becker, Don ^{[1
]}

机构：

[1] Discovery Semicond, Ewing, NJ 08628 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 5-8期

关键词：

optical receivers; photodiodes;

D O I：

10.1109/LPT.2008.918856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A p-i-n InGaAs photoreceiver with a 3-dB bandwidth of 6 GHz at 2-mu m wavelength is presented. The photodiode, having a responsivity of 1.34 A/W and a dark current of 400 nA, is coupled to a transimpedance amplifier to provide a conversion gain of 670 V/W at room temperature.

引用

页码：551 / 553

页数：3

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