Effects of IPA on texturing process for mono-crystalline silicon solar cell in TMAH solution

被引：11

作者：

Ou Weiying ^{[1
]}

Zhang Yao ^{[1
]}

Li Hailing ^{[1
]}

Zhao Lei ^{[1
]}

Zhou Chunlan ^{[1
]}

Diao Hongwei ^{[1
]}

Liu Min ^{[1
]}

Lu Weiming ^{[1
]}

Zhang Jun ^{[1
]}

Wang Wenjing ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Elect Engn, Key Lab Solar Thermal Energy & Photovolta Syst, Beijing 100190, Peoples R China

来源：

ENERGY, ENVIRONMENT AND BIOLOGICAL MATERIALS | 2011年 / 685卷

关键词：

Texture; pyramids; TMAH; IPA; TEXTURIZATION; SI;

D O I：

10.4028/www.scientific.net/MSF.685.31

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Texturization of mono-crystalline by chemical anisotropic etching is one of the most important technologies for modern silicon photovoltaic. IPA is usually added to the alkaline etchants to improve the uniformity of the random pyramid texture due to remove hydrogen bubbles sticking on the silicon wafer by improving the wettability of wafer surface. In this investigation, we carried out a systematic study on the influence of IPA concentrations on the textured surface. The etching experiments were performed on (100) silicon wafer in a mixture of 20 vol. % commercial TMAH solutions (10 wt.%) and IPA (rang from 0 similar to 12 vol. %) for etching time ranging from 10 to 70 min at 80 degrees C. The etching mechanism in the TMAH solutions with IPA addition was explained basing on the experimental results and the theoretical considerations.

引用

页码：31 / 37

页数：7

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