Mechanism of asymmetric lineshape broadening in GaAs1-xNx Raman spectra

被引：1
作者：
Mialitsin, Aleksej [1 ]
Fluegel, Brian [1 ]
Ptak, Aaron [1 ]
Mascarenhas, Angelo [1 ]
机构：
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源：
PHYSICAL REVIEW B | 2012年 / 86卷 / 04期
关键词：
ISOELECTRONIC TRAPS; GALLIUM PHOSPHIDE; SCATTERING; NITROGEN; SILICON;
D O I：
10.1103/PhysRevB.86.045209
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Resonance Raman spectroscopy is used to probe the asymmetric broadening of the LO phonon linewidth in a dilute GaAs1-xNx alloy (x = 0.41%). Electronic Raman scattering from a broad continuum is observed that gets enhanced concurrently with the LO phonon linewidth under resonance. The Fano interaction between the LO phonon and the electronic continuum is used to develop a model that satisfactorily explains the origin of the asymmetric LO phonon linewidth broadening in this abnormal alloy as arising due to coupling between the discrete and the continuum configurations.
引用
收藏
页数：7
相关论文
共 17 条
  • [1] Resonant Raman scattering in GaAsN:: Mixing, localization, and impurity band formation of electronic states -: art. no. 205325
    Bachelier, G
    Mlayah, A
    Cazayous, M
    Groenen, J
    Zwick, A
    Carrère, H
    Bedel-Pereira, E
    Arnoult, A
    Rocher, A
    Ponchet, A
    [J]. PHYSICAL REVIEW B, 2003, 67 (20)
  • [2] INVESTIGATION OF THE TEMPERATURE-DEPENDENCE OF ELECTRON AND PHONON RAMAN-SCATTERING IN SINGLE-CRYSTAL YBA2CU3O6.952
    BLUMBERG, G
    KLEIN, MV
    BORJESSON, L
    LIANG, R
    HARDY, WN
    [J]. JOURNAL OF SUPERCONDUCTIVITY, 1994, 7 (02): : 445 - 448
  • [3] Nitrogen-induced levels in GaAs1-xNx studied with resonant Raman scattering
    Cheong, HM
    Zhang, Y
    Mascarenhas, A
    Geisz, JF
    [J]. PHYSICAL REVIEW B, 2000, 61 (20) : 13687 - 13690
  • [4] RAMAN SCATTERING FROM ELECTRONIC EXCITATIONS IN N-TYPE SILICON CARBIDE
    COLWELL, PJ
    KLEIN, MV
    [J]. PHYSICAL REVIEW B, 1972, 6 (02): : 498 - &
  • [5] EFFECTS OF CONFIGURATION INTERACTION ON INTENSITIES AND PHASE SHIFTS
    FANO, U
    [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1866 - &
  • [6] ELECTRONIC RAMAN-SCATTERING AND METAL-INSULATOR-TRANSITION IN DOPED SILICON
    JAIN, K
    LAI, S
    KLEIN, MV
    [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5448 - 5464
  • [7] Klein M. V., 1983, TOP APPL PHYS, V8
  • [8] Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1-x
    Liu, H. F.
    Xiang, N.
    Tripathy, S.
    Chua, S. J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (10)
  • [9] Evolution of electronic states in GaAs1-xNx probed by resonant Raman spectroscopy -: art. no. 233201
    Mascarenhas, A
    Seong, MJ
    Yoon, S
    Verley, JC
    Geisz, JF
    Hanna, MC
    [J]. PHYSICAL REVIEW B, 2003, 68 (23)
  • [10] Raman scattering from the CaC6 superconductor in the presence of disorder
    Mialitsin, A.
    Kim, J. S.
    Kremer, R. K.
    Blumberg, G.
    [J]. PHYSICAL REVIEW B, 2009, 79 (06):
12