Tunable mechanical, electronic and magnetic properties of monolayer C3N nanoribbons by external fields

被引:35
|
作者
Ren, Yi [1 ,2 ]
Cheng, Fang [3 ]
Zhou, Xiaoying [1 ,2 ]
Chang, Kai [4 ]
Zhou, Guanghui [1 ,2 ]
机构
[1] Hunan Normal Univ, Dept Phys, Synerget Innovat Ctr Quantum Effects & Applicat H, Minist Educ, Changsha 410081, Hunan, Peoples R China
[2] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Manipulat, Synerget Innovat Ctr Quantum Effects & Applicat H, Minist Educ, Changsha 410081, Hunan, Peoples R China
[3] Changsha Univ Sci & Technol, Dept Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China
[4] Chinese Acad Sci, SKLSM, Inst Semicond, POB 912, Beijing 100083, Peoples R China
基金
中国国家自然科学基金;
关键词
HALF-METALLICITY; GRAPHENE; PHOTOCATALYST; STRAIN; WATER;
D O I
10.1016/j.carbon.2018.10.018
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional (2D) polyaniline with C3N stoichiometry, is a newly fabricated layered material that has been expected to possess fascinating electronic, thermal, mechanical and chemical properties. The nature of its counterpart nanoribbons offering even more tunability in properties because of the unique quantum confinement and edge effect, however, has not been revealed yet. Here we systemically study the mechanical, electronic and magnetic properties for various nanoribbons cutting from a monolayer C3N sheet along the typical crystallographic orientations. By the first-principles calculations we find that C3N nanoribbons exhibit sensitive responses to the externally applied electric field and strain. Specifically, the spin-selective half-metallicity depends on the external electric field or strain, as well as the ribbon width. For the asymmetric zigzag-edged ribbon, the spin-polarization rate approaches -100% at electric field strength -0.2 V/A. Interestingly, an applied strain can transform a symmetric zigzag-carbon-edge ribbon from a magnetic semiconductor to a half-metal. And the half-metal property remains unchanged when the strain increases from 8 to 15%, while the spin-up subband gap further increases to 0.46 eV. These numerical results may be useful to engineer and design magnetic-field-free spintronic devices based on the 2D C3N. (C) 2018 Elsevier Ltd. All rights reserved.
引用
收藏
页码:14 / 20
页数:7
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