Stability of perovskite materials and devices

被引:104
作者
Fu, Weifei [1 ,7 ]
Ricciardulli, Antonio Gaetano [1 ,8 ]
Akkerman, Quinten A. [2 ,3 ,9 ]
John, Rohit Abraham [2 ,3 ]
Tavakoli, Mohammad Mahdi [4 ]
Essig, Stephanie [5 ]
Kovalenko, Maksym V. [2 ,3 ]
Saliba, Michael [1 ,5 ,6 ]
机构
[1] Tech Univ Darmstadt, Inst Mat Sci, Alarich Weiss Str, Darmstadt, Germany
[2] Swiss Fed Inst Technol, Dept Chem & Appl Biosci, Lab Inorgan Chem, CH-8093 Zurich, Switzerland
[3] Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, CH-8600 Dubendorf, Switzerland
[4] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[5] Univ Stuttgart, Inst Photovolta ipv, Pfaffenwaldring 47, D-70569 Stuttgart, Germany
[6] Forschungszentrum Julich, Helmholtz Young Investigator Grp FRONTRUNNER, IEK5 Photovoltaik, D-52425 Julich, Germany
[7] Zhejiang Univ, Int Res Ctr forPolymers 10, Dept Polymer Sci & Engn, State Key Lab Silicon Mat, Hangzhou, Peoples R China
[8] Univ Strasbourg, CNRS, UMR 7006, ISIS, Strasbourg, France
[9] Ludwig Maximilians Univ LMU, Nanoinst Munchen & Fak Phys, Lehrstuhl Photon & Optoelekt, Koniginstr 10, D-80539 Munich, Germany
基金
欧盟地平线“2020”;
关键词
Halide perovskite; Optoelectronic devices; Degradation; Stabilization approaches; METAL-HALIDE PEROVSKITES; LIGHT-EMITTING-DIODES; DOT SOLAR-CELLS; ORGANIC-INORGANIC PEROVSKITE; HOLE-TRANSPORTING MATERIAL; LONG-TERM STABILITY; ROOM-TEMPERATURE; HIGHLY EFFICIENT; HIGH-PERFORMANCE; HYBRID PEROVSKITE;
D O I
10.1016/j.mattod.2022.06.020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Due to the excellent optoelectronic properties, organic-inorganic perovskites have drawn much attention and have been applied in different electronics with remarkable performance. However, the poor stability creates a massive barrier for the commercialization of perovskite electronic devices. In this review, we discuss intrinsic and extrinsic factors causing instabilities of perovskites and perovskite devices such as solar cells, liquid crystal displays (LCDs), light emitting diodes (LEDs), ionizing radiation detectors, transistors, memristors and sensors. We further review the stabilization approaches, including composition engineering, adoption of lower dimensional compositions, quantum dots, interface engineering, defects engineering and so on.
引用
收藏
页码:275 / 296
页数:22
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