Influence of the active layer thickness on the electrical properties of ZnO thin film transistors fabricated by radio frequency magnetron sputtering

被引：22

作者：

Huang, Hai-Qin ^{[1
]}

Liu, Feng-Juan ^{[1
]}

Sun, Jian ^{[1
]}

Zhao, Jian-Wei ^{[1
]}

Hu, Zuo-Fu ^{[1
]}

Li, Zhen-Jun ^{[1
]}

Zhang, Xi-Qing ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 2011年 / 72卷 / 12期

基金：

中国国家自然科学基金;

关键词：

Inorganic compounds; Oxides; Electrical properties; LOW-TEMPERATURE;

D O I：

10.1016/j.jpcs.2011.07.005

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the electrical properties of bottom-gate ZnO thin film transistors (TFTs) with different active layer thicknesses. The ZnO active layer films with thickness varied from 20 to 100 nm were deposited by radio frequency (rf) magnetron sputtering on SiO2/p-Si substrate and annealed at a high temperature of 950 degrees C. The transistor with 40 nm thick ZnO exhibited the best performance, with a field effect mobility of 27.5 cm(2)/V s, a threshold voltage of -2.4 V and an on/off ratio of 7 x 10(3). (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1393 / 1396

页数：4

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