Spontaneous oscillations and triggered pulsing in GaAs/InGaAs multiquantum well structures

被引：3

作者：

Perera, AGU ^{[1
]}

Matsik, SG

Letov, VY

Liu, HC

Gao, M

Buchanan, M

Schaff, WJ

机构：

[1] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[3] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 07期

基金：

美国国家科学基金会;

关键词：

pulsing devices; InGaAs quantum well devices; nonlinear effects; s-type negative differential conductivity; artificial neurons;

D O I：

10.1016/S0038-1101(01)00138-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Spontaneous and triggered pulsing behavior in InGaAs multiquantum well devices driven by a constant bias voltage are reported. Bias regions for the occurrence of spontaneous periodic oscillations as well as damped triggered pulsing were experimentally determined. An empirical model based on the observed shape of the I-V curve and the negative differential conductance is proposed to qualitatively explain both the triggered pulsing and the spontaneous oscillating behavior, which could lead to novel infrared detection techniques and neural network applications. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1121 / 1125

页数：5

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