A 2.87 ppm/°C 65 nm CMOS bandgap reference with nonlinearity compensation

被引:4
作者
Tong Xingyuan [1 ,2 ]
Zhu Zhangming [2 ]
Yang Yintang [2 ]
机构
[1] Xian Univ Posts & Telecommun, Sch Elect Engn, Xian 710061, Peoples R China
[2] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China
关键词
bandgap references; nonlinearity correction; mixed mode; CMOS; low temperature coefficient; VOLTAGE;
D O I
10.1080/00207217.2011.593134
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Based on the review and analysis of two recently reported low temperature coefficient (TC) bandgap voltage references (BGRs), a new temperature compensation technique is presented. With the double-end piecewise nonlinearity correction method, the logarithm cancellation technique and the mixed-mode output topology, a BGR with high-temperature stability is realised based on 65 nm CMOS low-leakage process. The post-simulation results using Spectre show that this BGR produces an output voltage of about 953 mV with 2.5 V supply voltage, and the output voltage varies by only 0.16 mV from -40 degrees C to 125 degrees C. This low TC BGR has been used in a 65 nm CMOS touch screen controller, and the measurement shows that the output voltage of this BGR is about 949 mV varying by 0.44 mV from -40 degrees C to 125 degrees C. The TC of this BGR is about 2.87 ppm/degrees C, meeting the requirement of high-precision SoC application.
引用
收藏
页码:1269 / 1279
页数:11
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