Hot-electron-induced degradation in high-voltage submicron DMOS transistors

被引：22
|
作者：
Manzini, S [1 ]
Contiero, C [1 ]
机构：
[1] SGS THOMSON MICROELECTR,DEDICATED PROD GRP,I-20010 CORNAREDO,MILANO,ITALY
来源：
ISPSD '96 - 8TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, PROCEEDINGS | 1996年
关键词：
D O I：
10.1109/ISPSD.1996.509450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：65 / 68
页数：4
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