Effects of carrier concentration and phonon energy on carrier lifetime in Type-2 SLS and properties of InAs1-XSbX alloys

被引：24

作者：

Belenky, G. ^{[1
]}

Kipshidze, G. ^{[1
]}

Donetsky, D. ^{[1
]}

Svensson, S. P. ^{[2
]}

Sarney, W. L. ^{[2
]}

Hier, H. ^{[2
]}

Shterengas, L. ^{[1
]}

Wang, D. ^{[1
]}

Lin, Y. ^{[1
]}

机构：

[1] SUNY Stony Brook, Dept ECE, Stony Brook, NY 11794 USA

[2] US Army Res Lab, Adelphi, MD 20783 USA

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XXXVII | 2011年 / 8012卷

关键词：

STRAINED-LAYER SUPERLATTICES; GAAS; PHOTOLUMINESCENCE; RECOMBINATION; INAS; INSB;

D O I：

10.1117/12.883625

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dependences of carrier lifetime on excess carrier concentration in Type-2 Strained Layer Superlattices (SLS) and bulk HgCdTe were measured at T = 77 K. The minor role of Auger recombination in Type-2 SLS materials was confirmed. Acceptor-type centers linked to GaSb were considered to be a channel contributing to carrier recombination in the Type-2 SLS. The difference in optical phonon energy in InAs, GaSb and HgCdTe was discussed in relation to the carrier capture cross-section to the centers and carrier recombination. Gallium-free materials, namely, unrelaxed InAs1-xSbx epilayers with lattice constants up to 2.1 % larger than that of GaSb were developed on GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by molecular beam epitaxy (MBE). Alternatively, the InAs0.12Sb0.88 layer was developed on the InAsSb graded buffer layer grown on InSb. The structural and optical characterization of InAs1-xSbx layers with the thicknesses in the range from 0.5 to 1.5-mu m was performed. Carrier lifetimes in InAs0.8Sb0.2 longer than that in the Type-2 SLS have been demonstrated.

引用

页数：10

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