Device physics - Chance match

被引:2
作者
Westervelt, Robert M. [1 ,2 ]
机构
[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA
[2] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA
关键词
D O I
10.1038/453166a
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
A clever device uses the quantum statistics of electron tunnelling to match image patterns. The circuit is low-power, works at room temperature — and could point to a way forward for silicon electronics.
引用
收藏
页码:166 / 167
页数:2
相关论文
共 9 条
[1]   The future of nanocomputing [J].
Bourianoff, G .
COMPUTER, 2003, 36 (08) :44-+
[2]   Research directions in beyond CMOS computing [J].
Bourianoff, George I. ;
Gargini, Paolo A. ;
Nikonov, Dmitri E. .
SOLID-STATE ELECTRONICS, 2007, 51 (11-12) :1426-1431
[3]   A long-term view of research targets in nanoelectronics [J].
Cavin, RK ;
Zhirnov, VV ;
Bourianoff, GI ;
Hutchby, JA ;
Herr, DJC ;
Hosack, HH ;
Joyner, WH ;
Wooldridge, TA .
JOURNAL OF NANOPARTICLE RESEARCH, 2005, 7 (06) :573-586
[4]   A ferroelectric associative memory technology employing heterogate-FGMOS structure [J].
Kobayashi, D ;
Shibata, T ;
Fujimori, Y ;
Nakamura, T ;
Takasu, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (10) :2188-2197
[5]   Single-electron devices and their applications [J].
Likharev, KK .
PROCEEDINGS OF THE IEEE, 1999, 87 (04) :606-632
[6]   Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors [J].
Nishiguchi, K. ;
Ono, Y. ;
Fujiwara, A. ;
Inokawa, H. ;
Takahashi, Y. .
APPLIED PHYSICS LETTERS, 2008, 92 (06)
[7]   Room-temperature-operating data processing circuit based on single-electron transfer and detection with metal-oxide-semiconductor field-effect transistor technology [J].
Nishiguchi, K ;
Fujiwara, A ;
Ono, Y ;
Inokawa, H ;
Takahashi, Y .
APPLIED PHYSICS LETTERS, 2006, 88 (18)
[8]   Multilevel memory using an electrically formed single-electron box [J].
Nishiguchi, K ;
Inokawa, H ;
Ono, Y ;
Fujiwara, A ;
Takahashi, Y .
APPLIED PHYSICS LETTERS, 2004, 85 (07) :1277-1279
[9]  
Uchida K, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P177, DOI 10.1109/IEDM.2002.1175807