Controlled preparation of well-ordered transition metal oxide layers on a metallic surface

被引:20
作者
Middeke, J [1 ]
Blum, RP [1 ]
Hafemeister, M [1 ]
Niehus, H [1 ]
机构
[1] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
关键词
scanning tunneling microscopy; growth; catalysis; vanadium oxide; niobium; molybdenum oxide; single crystal surfaces; metallic surfaces;
D O I
10.1016/j.susc.2005.03.065
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A method to create various well-ordered two dimensional transition metal oxide films on a metallic substrate has been exploited. The formation of an intermediate amorphous layer with controllable metal-oxygen stoichiometry serves as an important precursor condition for the final transformation into a mono-phase, crystalline oxide layer via mild annealing. As a key ingredient serves a Cu3Au(1 0 0) substrate covered by oxygen. The flat Cu-O topmost layer stops completely intermixing of the substrate material with the subsequently evaporated transition metal film. Likewise the wetting of the surface is considerably enhanced and a homogeneous oxidation of the film is strongly promoted. The proposed technique appears to be widely efficient for preparation of various two dimensional oxide films covering the entire Cu3Au(1 0 0) substrate. Its usefulness is demonstrated successfully for vanadium, niobium and molybdenum to produce a set of single-phase transition metal oxides of different stoichiometry and geometrical structure. All created oxides are found to be thermally stable at least up to a substrate temperature of 800 K. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:219 / 228
页数:10
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