Performance assessment of a novel 4H-SiC junctionless planar power MOSFET towards improving electrical properties

被引：4
作者：
Zerroumda, B. [1 ]
Djeffal, F. [2 ]
Benaggoune, S. [1 ]
Ferhati, H. [2 ,3 ]
机构：
[1] Univ Batna 2, Dept Elect Engn, LSTE, Batna, Algeria
[2] Univ Batna 2, Dept Elect, LEA, Batna, Algeria
[3] Univ Larbi Ben Mhidi, ISTA, Oum El Bouaghi, Algeria
来源：
MICRO AND NANOSTRUCTURES | 2022年 / 169卷
关键词：
Power MOSFET; 4H-SiC; Junctionless; Breakdown; Channel resistance; POTENTIAL HIGH-PERFORMANCE; TRENCH MOSFET; DEVICE; RELIABILITY; STACK;
D O I：
10.1016/j.micrna.2022.207346
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, a novel 4H-SiC power MOSFET structure based on junctionless (JL) concept is proposed. The proposed device is investigated using accurate numerical models based on Atlas TCAD device simulator. It is revealed that the use of cost-effective junctionless structure can allow overcoming problems related to power MOSFET channel resistance, which results in a high figure of merit (FoM) (BV2/R-on,R-sp = 2676/5.78 = 1236) without the need of lowering the drift region resistance. In addition, the analyzed device based on JL aspect exhibits a good reliability at short-circuit conditions. Moreover, the device breakdown voltage, specific on resistance and drain current are studied in order to reveal and provide some insights regarding the impact of design dimensions on these electrical performances. Besides, the output and transfer characteristics are compared to those of the conventional counterpart, as well as the critical electric field at breakdown. It is found that the proposed structure pave the way for achieving enhanced derived current capability, while maintaining excellent breakdown characteristics. These significant re-sults makes the proposed JL structure a promising candidate toward the design of high-performance and cost-effective 4H-SiC MOSFETs, which are highly suitable for power elec-tronics applications.
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页数：10
相关论文
共 24 条
[1]  
ATLAS user manual, 2012, ATLAS USER MANUAL DE
[2]   Improving avalanche robustness of SiC MOSFETs by optimizing three-region P-well doping profile [J].
Bai, Zhiqiang ;
Tang, Xiaoyan ;
He, Yanjing ;
Yuan, Hao ;
Song, Qingwen ;
Zhang, Yuming .
MICROELECTRONICS RELIABILITY, 2021, 124
[3]  
Colinge JP, 2010, NAT NANOTECHNOL, V5, P225, DOI [10.1038/NNANO.2010.15, 10.1038/nnano.2010.15]
[4]   A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs [J].
Deng, Xiaochuan ;
Guo, Yuanxu ;
Dai, Tianxiang ;
Li, Chengzhan ;
Chen, Ximing ;
Chen, Wanjun ;
Zhang, Yourun ;
Zhang, Bo .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 68 :108-113
[5]   Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects [J].
Djeffal, F. ;
Bentrcia, T. ;
Abdi, M. A. ;
Bendib, T. .
MICROELECTRONICS RELIABILITY, 2011, 51 (03) :550-555
[6]   Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications [J].
Ferhati, H. ;
Djeffal, F. .
JOURNAL OF COMPUTATIONAL ELECTRONICS, 2018, 17 (01) :129-137
[7]   Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects [J].
Ferhati, H. ;
Douak, F. ;
Djeffal, F. .
SUPERLATTICES AND MICROSTRUCTURES, 2017, 109 :869-879
[8]   Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications [J].
Ferhati, H. ;
Djeffal, F. .
OPTICS AND LASER TECHNOLOGY, 2017, 97 :29-35
[9]   1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect [J].
Fu, Hao ;
Wei, Zhaoxiang ;
Liu, Siyang ;
Wei, Jiaxing ;
Xu, Hang ;
Ni, Lihua ;
Yang, Zhuo ;
Sun, Weifeng .
MICROELECTRONICS RELIABILITY, 2021, 123
[10]   Impact ionization coefficients of 4H silicon carbide [J].
Hatakeyama, T ;
Watanabe, T ;
Shinohe, T ;
Kojima, K ;
Arai, K ;
Sano, N .
APPLIED PHYSICS LETTERS, 2004, 85 (08) :1380-1382
123