The effect of Co ion implantation on Ge1-xMnx films

被引:6
|
作者
Gao, Weixia [1 ,2 ,3 ]
Wang, Li [1 ,2 ]
Hou, Denglu [1 ,2 ]
Hu, Yuchan [1 ,2 ]
Zhang, Qian [1 ,2 ]
Ma, Li [1 ,2 ]
Zhen, Congmian [1 ,2 ]
机构
[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
[2] Hebei Normal Univ, Adv Thin Films Lab, Shijiazhuang 050016, Peoples R China
[3] Handan 1 Middle Sch, Handan 050062, Peoples R China
基金
美国国家科学基金会;
关键词
Doping; Ion implantation; Magnetic material; Semiconducting material; FERROMAGNETISM; SEMICONDUCTOR; SPECTROSCOPY; XPS; GE;
D O I
10.1016/j.apsusc.2011.04.132
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ge1-xMnx (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn-Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn-T-Mn-Ge-Mn-T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films. (C) 2011 Published by Elsevier B. V.
引用
收藏
页码:8871 / 8875
页数:5
相关论文
共 50 条
  • [1] Growth and magnetic properties of Ge1-xMnx single crystals
    Kim, Sung-Kyu
    Park, Sang Eon
    Cho, Yong Chan
    Cho, Chae Ryong
    Jeong, Se-Young
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S518 - S522
  • [2] Ge1-xMnx heteroepitaxial quantum dots: Growth, morphology, and magnetism
    Kassim, J.
    Nolph, C.
    Jamet, M.
    Reinke, P.
    Floro, J.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (07)
  • [3] Synthesis and Magnetic Characterization of Coaxial Ge1-xMnx/a-Si Heterostructures
    Barth, Sven
    Kazakova, Olga
    Estrade, Sonia
    Hobbs, Richard G.
    Peiro, Francesca
    Morris, Michael A.
    Holmes, Justin D.
    CRYSTAL GROWTH & DESIGN, 2011, 11 (12) : 5253 - 5259
  • [4] Effect of Mn concentration and growth temperature on nanostructures and magnetic properties of Ge1-xMnx grown on Si
    Wang, Ya
    Xiu, Faxian
    Wang, Yong
    Xu, Hongyi
    Li, De
    Kou, Xufeng
    Wang, Kang L.
    Jacob, Ajey P.
    Zou, Jin
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (20) : 3034 - 3039
  • [5] Vertical self-organization of Ge1-xMnx nanocolumn multilayers grown on Ge(001) substrates
    Thi Giang Le
    Minh Than Dau
    MODERN PHYSICS LETTERS B, 2016, 30 (20):
  • [6] The effects of Mn concentration on structural and magnetic properties of Ge1-xMnx diluted magnetic semiconductors
    Le, Thi-Giang
    Nam, D. N. H.
    Dau, M-T
    Luong, T. K. P.
    Khiem, N. V.
    Le Thanh, V.
    Michez, L.
    Derrien, J.
    INTERNATIONAL CONFERENCE ON TRENDS IN SPINTRONICS AND NANOMAGNETISM (TSN 2010), 2011, 292
  • [7] Magnetism in melt grown dilute magnetic semiconductor Ge1-xMnx from electron density
    Sheeba, R. A. J. R.
    Saravanan, R.
    Berchmans, L. John
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 15 (06) : 731 - 739
  • [8] Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal Ge1-xMnx magnetic semiconductor films
    Deng, J. X.
    Tian, Y. F.
    He, S. M.
    Bai, H. L.
    Xu, T. S.
    Yan, S. S.
    Dai, Y. Y.
    Chen, Y. X.
    Liu, G. L.
    Mei, L. M.
    APPLIED PHYSICS LETTERS, 2009, 95 (06)
  • [9] Magnetism in Ge(1-x) Mn(x) Thin Films and Quantum Dots Synthesized by Ion Implantation
    Yin, Wenjing
    He, Li
    Dolph, Melissa Commisso
    Lu, Jiwei
    Hull, Robert
    Wolf, Stuart A.
    SPIN PHYSICS, 2009, 1149 : 911 - +
  • [10] Self-assembled Mn5Ge3 nanomagnets close to the surface and deep inside a Ge1-xMnx epilayer
    Lechner, R. T.
    Holy, V.
    Ahlers, S.
    Bougeard, D.
    Stangl, J.
    Trampert, A.
    Navarro-Quezada, A.
    Bauer, G.
    APPLIED PHYSICS LETTERS, 2009, 95 (02)