The effect of Co ion implantation on Ge1-xMnx films

被引：6

作者：

Gao, Weixia ^{[1
,2
,3
]}

Wang, Li ^{[1
,2
]}

Hou, Denglu ^{[1
,2
]}

Hu, Yuchan ^{[1
,2
]}

Zhang, Qian ^{[1
,2
]}

Ma, Li ^{[1
,2
]}

Zhen, Congmian ^{[1
,2
]}

机构：

[1] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China

[2] Hebei Normal Univ, Adv Thin Films Lab, Shijiazhuang 050016, Peoples R China

[3] Handan 1 Middle Sch, Handan 050062, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 21期

基金：

美国国家科学基金会;

关键词：

Doping; Ion implantation; Magnetic material; Semiconducting material; FERROMAGNETISM; SEMICONDUCTOR; SPECTROSCOPY; XPS; GE;

D O I：

10.1016/j.apsusc.2011.04.132

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ge1-xMnx (x = 0, 0.013, 0.0226, 0.0339, 0.0565, 0.0678, 0.0904, 0.113) films prepared by magnetron sputtering at 773 K had a Ge cubic structure except for x = 0.1130. Co ion implantation into these films can effectively prevent the formation of a second phase. Both single-doped and co-doped samples were ferromagnetic at room temperature. The d-d exchange interaction between the interstitial Mn (MnT) and the substituted Mn (Mn-Ge) resulted in ferromagnetism in the sputtered films. Since Co ion implantation destroyed the Mn-T-Mn-Ge-Mn-T complex, the saturated magnetization decreased. Hall measurements revealed that the Co ion implanted films were n-type semiconductors, and the anomalous Hall Effect (AHE) suggested the ferromagnetism was carrier-mediated in the implanted films. (C) 2011 Published by Elsevier B. V.

引用

页码：8871 / 8875

页数：5

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