Electronic structure and the nature of electronic states of amorphous silicon

In this Letter we present results of Monte Carlo simulation of a model of amorphous Si using an efficient tight-binding technique which gives high quality, reliable structure of amorphous Si. We present the structural and electronic properties of the model and study the nature of electronic states. The electronic states near the band edges have been found to be localized using participation numbers calculation. (C) 2001 Elsevier Science B.V. All rights reserved.