Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET

被引：0

作者：

Yang Zhou ^{[1
,2
]}

Wang Chong ^{[1
]}

Yu Jie ^{[1
,3
]}

Hu Wei-Da ^{[4
]}

Yang Yu ^{[1
]}

机构：

[1] Yunnan Univ, Inst Optoelect Informat Mat, Kunming 650091, Peoples R China

[2] China Mobile Grp Design Inst Co LTD, Chongqing Branch, Chongqing 401147, Peoples R China

[3] Nanjing Univ, State Key Lab Solid State Microstruct, Sch Electron Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2015年 / 34卷 / 02期

基金：

中国国家自然科学基金;

关键词：

strained Si1-xGex channel; p-MOSFET; threshold-voltage; kink; HOLE MOBILITY; SIGE; PHOTOLUMINESCENCE; TRANSPORT; ALLOYS; MODEL;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A two-dimension numerical analysis for the electrical characteristics of Si/strained Si1-xGex/Si hetero-junction-on-insulator p-MOSBET has been complished. The characteristic of the threshold voltage, transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device, compained by obvious kink in the output characteristics.

引用

页码：172 / 176

页数：5

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