Experimental determination and numerical modelling of solid-liquid interface shapes for vertical Bridgman grown GaSb crystals

被引:19
作者
Boiton, P [1 ]
Giacometti, N [1 ]
Santailler, JL [1 ]
Duffar, T [1 ]
Nabot, JP [1 ]
机构
[1] Commissariat Energie Atom, DTA, CEREM, DEM,SPCM, F-38054 Grenoble 9, France
关键词
vertical Bridgman; GaSb; numerical modelling; interface shape;
D O I
10.1016/S0022-0248(98)00617-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A facility, based on a profiled resistive heater, has been designed for the growth of antimonide crystals (GaSb, InSb) by the vertical Bridgman method. Solid-liquid interface shapes during the growth of 2-in diameter crystals are marked by means of variations of the pulling rate and are revealed by chemical etching. The comparison with the calculated interface shapes, obtained using a finite element method, gives a satisfactory agreement. It is shown that the heat transfer and consequently the interface shapes are greatly influenced by the crucible assembly. For example, small spacings around the crucible or slots in the crucible holder can change the interface curvature from convex to concave. From numerical simulations it is also shown that convection in the melt flattens the interface but that an increase of the pulling rate has the reverse effect. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:43 / 52
页数:10
相关论文
共 23 条
[1]   CONVECTION AND SEGREGATION IN DIRECTIONAL SOLIDIFICATION OF DILUTE AND NON-DILUTE BINARY-ALLOYS - EFFECTS OF AMPOULE AND FURNACE DESIGN [J].
ADORNATO, PM ;
BROWN, RA .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :155-190
[2]   Some new design features for vertical Bridgman furnaces and the investigation of small angle grain boundaries developed during VB growth of GaAs [J].
Althaus, M ;
Sonnenberg, K ;
Kussel, E ;
Naeven, R .
JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) :566-571
[3]   Growth of 2''InP and GaAs crystals by the vertical gradient freeze (VGF) technique and characterization [J].
Amon, J ;
Zemke, D ;
Hoffmann, B ;
Muller, G .
JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) :646-650
[4]  
BARAT C, IN PRESS J CRYSTAL G
[5]  
BARAT C, 1994, THESIS U RENNES FRAN
[6]   GROWTH-RATES AND INTERFACE SHAPES IN GERMANIUM AND LEAD-TIN TELLURIDE OBSERVED IN-SITU, REAL-TIME IN VERTICAL BRIDGMAN FURNACES [J].
BARBER, PG ;
BERRY, RF ;
DEBNAM, WJ ;
FRIPP, AL ;
WOODELL, G ;
SIMCHICK, RT .
JOURNAL OF CRYSTAL GROWTH, 1995, 147 (1-2) :83-90
[7]  
BOITON P, 1996, THESIS U MONTPELLIER
[8]   VERTICAL SEEDED MELT GROWTH OF GAAS [J].
BOURRET, ED ;
GUITRON, JB ;
GALIANO, ML ;
HALLER, EE .
JOURNAL OF CRYSTAL GROWTH, 1990, 102 (04) :877-884
[9]   RADIOSCOPIC VISUALIZATION OF INDIUM-ANTIMONIDE GROWTH BY THE VERTICAL BRIDGMAN-STOCKBARGER TECHNIQUE [J].
CAMPBELL, TA ;
KOSTER, JN .
JOURNAL OF CRYSTAL GROWTH, 1995, 147 (3-4) :408-410
[10]   RADIAL SEGREGATION INDUCED BY NATURAL-CONVECTION AND MELT SOLID INTERFACE SHAPE IN VERTICAL BRIDGMAN GROWTH [J].
CHANG, CJ ;
BROWN, RA .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :343-364