A model for stress generation and stress relief mechanisms applied to as-deposited filtered cathodic vacuum arc amorphous carbon films

被引:20
作者
Bilek, MMM [1 ]
Verdon, M [1 ]
Ryves, L [1 ]
Oates, TWH [1 ]
Ha, CT [1 ]
McKenzie, DR [1 ]
机构
[1] Univ Sydney, Sch Phys, Dept Appl & Plasma Phys Grp, Sydney, NSW 2006, Australia
关键词
plasma immersion ion implantation; filtered cathodic vacuum arc; stress relaxation;
D O I
10.1016/j.tsf.2004.11.159
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The application of plasma immersion ion implantation (PIII) both during and after the deposition of amorphous carbon by filtered cathodic vacuum arc (FCVA) has been shown to significantly lower the intrinsic stress in the coatings. Stress relaxation is found to occur at applied bias as low as 500 V and we observe a trade off between applied bias voltage and pulsing frequency. This paper presents results obtained with pulse bias voltages ranging from 500 V to 20 kV, which show that very thick high strength carbon films suitable for biomedical applications can be grown using this method. In the absence of high voltage pulse biasing during deposition, the intrinsic stress in the films is found to depend on the dc bias applied during growth in the way commonly observed in thin film deposition-an initial increase with bias to a maximum followed by a decrease at higher bias. We propose a model to account for the stress generation energy window commonly observed and to account for the dependence of stress relief, due to the application of PIII during deposition, on both the applied bias voltage and the pulsing frequency. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:69 / 73
页数:5
相关论文
共 20 条
[1]   The kinetic energy of carbon ions in vacuum arc plasmas: A comparison of measuring techniques [J].
Anders, A ;
Yushkov, GY .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (02) :970-974
[2]   Energetic deposition using filtered cathodic arc plasmas [J].
Anders, A .
VACUUM, 2002, 67 (3-4) :673-686
[3]   Imaging the separation of cathodic arc plasma and macroparticles in curved magnetic filters [J].
Anders, A .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2002, 30 (01) :108-109
[4]   Superior attachment of high-quality hydrogen-free amorphous diamond films to solid materials [J].
Anttila, A ;
Lappalainen, R ;
Tiainen, VM ;
Hakovirta, M .
ADVANCED MATERIALS, 1997, 9 (15) :1161-&
[5]   Practical plasma immersion ion implantation for stress regulation and treatment of insulators [J].
Bilek, MMM ;
McKenzie, DR ;
Tarrant, RN ;
Oates, TWH ;
Ruch, P ;
Newton-McGee, K ;
Shi, Y ;
Tompsett, D ;
Nguyen, HC ;
Gan, BK ;
Kwok, DT .
CONTRIBUTIONS TO PLASMA PHYSICS, 2004, 44 (5-6) :465-471
[6]   Use of low energy and high frequency PBII during thin film deposition to achieve relief of intrinsic stress and microstructural changes [J].
Bilek, MMM ;
McKenzie, DR ;
Moeller, W .
SURFACE & COATINGS TECHNOLOGY, 2004, 186 (1-2) :21-28
[7]   Control of stress and microstructure in cathodic arc deposited films [J].
Bilek, MMM ;
Tarrant, RN ;
McKenzie, DR ;
Lim, SHN ;
McCulloch, DG .
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2003, 31 (05) :939-944
[8]   Thick, well-adhered, highly stressed tetrahedral amorphous carbon [J].
Chhowalla, M .
DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) :1011-1016
[9]  
Coupeau C, 2001, VIDE, V56, P594
[10]   A SIMPLE-MODEL FOR THE FORMATION OF COMPRESSIVE STRESS IN THIN-FILMS BY ION-BOMBARDMENT [J].
DAVIS, CA .
THIN SOLID FILMS, 1993, 226 (01) :30-34