Defect-Engineered Graphene for High-Energy- and High-Power-Density Supercapacitor Devices

被引：258

作者：

Zhu, Jingyi ^{[1
]}

Childress, Anthony S. ^{[1
]}

Karakaya, Mehmet ^{[1
]}

Dandeliya, Sushmita ^{[2
]}

Srivastava, Anurag ^{[2
]}

Lin, Ye ^{[3
]}

Rao, Apparao M. ^{[1
]}

Podila, Ramakrishna ^{[1
,4
]}

机构：

[1] Clemson Univ, Dept Phys & Astron, Clemson Nanomat Ctr, COMSET, Clemson, SC 29634 USA

[2] ABV Indian Inst Informat Technol & Management, Gwalior 474010, Madhya Pradesh, India

[3] Univ South Carolina, Dept Chem Engn, Columbia, SC 29208 USA

[4] Clemson Univ, Lab Nanobiophys, Clemson, SC 29634 USA

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 33期

基金：

美国国家科学基金会;

关键词：

IONIC LIQUID; CARBON; CAPACITANCE; SIZE;

D O I：

10.1002/adma.201602028

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Defects are often written off as performance limiters. Contrary to this notion, it is shown that controlling the defect confi guration in graphene is critical to overcome a fundamental limitation posed by quantum capacitance and opens new channels for ion diffusion. Defect-engineered graphene flexible pouch capacitors with energy densities of 500% higher than the state-of-the-art supercapacitors are demonstrated.

引用

页码：7185 / +

页数：9

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