Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers

被引:74
作者
Collazuol, G. [1 ]
Ambrosi, G.
Boscardin, M.
Corsi, F.
Dalla Betta, G. F.
Del Guerra, A.
Dinu, N.
Galimberti, M.
Giulietti, D.
Gizzi, L. A.
Labate, L.
Llosa, G.
Marcatili, S.
Morsani, F.
Piemonte, C.
Pozza, A.
Zaccarelli, L.
Zorzi, N.
机构
[1] Scuola Normale Super Pisa, I-56127 Pisa, Italy
[2] Ist Nazl Fis Nucl, Sez Pisa, I-56127 Pisa, Italy
[3] Univ Pisa, Dipartimento Fis, I-56127 Pisa, Italy
[4] IRST, Fdn Bruno Kessler, Div Microsistemi, I-38050 Trento, Italy
[5] CNR, IPCF, Intense Laser Irradiat Lab, I-56127 Pisa, Italy
[6] Ist Nazl Fis Nucl, Sez Perugia, I-06123 Perugia, Italy
[7] Ist Nazl Fis Nucl, Sez Padova, Grp Collegato Trento, I-38050 Trento, Italy
[8] DEE Politecn Bari, I-70125 Bari, Italy
[9] Ist Nazl Fis Nucl, Sez Bari, I-70125 Bari, Italy
关键词
silicon photomultiplier; opto-semiconductor; photon detection efficiency; high resolution timing; single photon;
D O I
10.1016/j.nima.2007.08.027
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:461 / 464
页数:4
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