Fast and simple method for calculating the minority-carrier current in arbitrarily doped semiconductors

被引：0
|
作者：
Rinaldi, NF
机构：
[1] Department of Electronic Engineering, University of Naples, 21-80125, Naples
来源：
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 1996年 / 15卷 / 08期
关键词：
D O I：
10.1109/43.511582
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A fast numerical method for evaluating the minority-carrier current injected into arbitrarily doped semiconductor regions is presented. The method is based on an efficient regional approach and is very easy to implement.
引用
收藏
页码：1025 / 1026
页数：2
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