Perovskite Metal-Oxide-Semiconductor Structures for Interface Characterization

被引：7

作者：

Cunha, Jose M. V. ^{[1
,2
,3
]}

Barreiros, M. Alexandra ^{[4
]}

Curado, Marco A. ^{[1
,5
]}

Lopes, Tomas S. ^{[1
,6
,7
,8
]}

Oliveira, Kevin ^{[1
]}

Oliveira, Antonio J. N. ^{[1
,2
,3
]}

Barbosa, Joao R. S. ^{[1
]}

Vilanova, Antonio ^{[1
]}

Brites, Maria Joao ^{[4
]}

Mascarenhas, Joao ^{[4
]}

Flandre, Denis ^{[9
]}

Silva, Ana G. ^{[10
]}

Fernandes, Paulo A. ^{[1
,2
,3
,11
]}

Salome, Pedro M. P. ^{[1
,2
,3
,11
]}

机构：

[1] INL Int Iberian Nanotechnol Lab, Ave Mestre Jose Veiga, P-4715330 Braga, Portugal

[2] Univ Aveiro, Dept Fis, Campus Univ Santiago, P-3810193 Aveiro, Portugal

[3] Univ Aveiro, i3N, Campus Univ Santiago, P-3810193 Aveiro, Portugal

[4] LNEG, Estr Paco do Lumiar 22, P-1649038 Lisbon, Portugal

[5] Univ Coimbra, Dept Phys, CFisUC, P-3004516 Coimbra, Portugal

[6] Hasselt Univ Partner Solliance, Inst Mat Res IMO, Agoralaangebouw H, B-3590 Diepenbeek, Belgium

[7] Imec Div IMOMEC Partner Solliance, Wetenschapspk 1, B-3590 Diepenbeek, Belgium

[8] EnergyVille, Thorpk,Poort Genk 8310 & 8320, B-3600 Genk, Belgium

[9] UCLouvain, ICTEAM Inst, Pl Levant 3, B-1348 Louvain La Neuve, Belgium

[10] Univ Nova Lisboa, CEFITEC, Fac Ciencias & Tecnol, Dept Fis, Campus Caparica, P-2829516 Lisbon, Portugal

[11] Inst Politecn Porto, Inst Super Engn Porto, Dept Fis, CIETI, P-4200072 Porto, Portugal

来源：

ADVANCED MATERIALS INTERFACES | 2021年 / 8卷 / 20期

关键词：

metal-oxide-semiconductors; perovskite and charge carrier transport layer interface; SnO; (2); perovskite interface traps; PROCESSED TIN OXIDE; SOLAR-CELLS; SURFACE PASSIVATION; HALIDE PEROVSKITES; THIN-FILM; LAYER; TEMPERATURE; TRANSPORT; PERFORMANCE; DEPOSITION;

D O I：

10.1002/admi.202101004

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Perovskite solar cells (PSCs) are one of the most promising photovoltaic technologies. Amongst several challenges, developing and optimizing efficient electron transport layers that can be up-scaled still remains a massive task. Admittance measurements on metal-oxide-semiconductor (MOS) devices allow to better understand the optoelectronic properties of the interface between perovskite and the charge carrier transport layer. This work discloses a new pathway for a fundamental characterization of the oxide/semiconductor interface in PSCs. Inverted MOS structures, that is, glass/fluorine-doped tin oxide/tin oxide (SnO2)/perovskite are fabricated and characterized allowing to perform a comparative study on the optoelectronic characteristics of the interface between the perovskite and sputtered SnO2. Admittance measurements allow to assess the interface fixed oxide charges (Q(f)) and interface traps density (D-it), which are extremely relevant parameters that define interface properties of extraction layers. It is concluded that a 30 nm thick SnO2 layer without annealing presents an additional recombination mechanism compared to the other studied layers, and a 20 nm thick SnO2 layer without annealing presents the highest positive Q(f) values. Thus, an effective method is shown for the characterization of the charge carrier transport layer/perovskite interface using the analysis performed on perovskite-based inverted MOS devices.

引用

页数：12

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