Atomic layer deposition and characterization of Ga-doped ZnO thin films

被引：40

作者：

Saito, K. ^{[1
]}

Hiratsuka, Y. ^{[1
]}

Omata, A. ^{[1
]}

Makino, H. ^{[1
]}

Kishimoto, S. ^{[1
]}

Yamamoto, T. ^{[1
]}

Horiuchi, N. ^{[1
]}

Hirayama, H. ^{[1
]}

机构：

[1] Teikyo Univ Sci & Technol, Dept Media & Informat Syst, Uenohara, Yamanashi 4090193, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2007年 / 42卷 / 1-6期

关键词：

D O I：

10.1016/j.spmi.2007.04.041

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H2O as Zn and 0 precursors. ZnO thin films were grown on c-plane sapphire (C-Al2O3) substrates at 300 degrees C. For undoped ZnO thin films, it was found that the intensity of ZnO (10 (1) over bar1) reflection peak increased and the electron concentration increased from 6.8 x 10(18) to 1.1 x 10(20) cm(-3) with the increase of DEZ flow rate, which indicates the increase of 0 vacancies (V-O) and/or Zn interstitials (Zni). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0 x 10(-4) Omega cm was achieved at the TEG flow rate of 0.24 mu mol/min. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：172 / 175

页数：4

共 7 条

[1] Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant [J].

Kim, SK ;

Hwang, CS ;

Park, SHK ;

Yun, SJ .

THIN SOLID FILMS, 2005, 478 (1-2) :103-108

[2] Photo atomic layer deposition of transparent conductive ZnO films [J].

Saito, K ;

Watanabe, Y ;

Takahashi, K ;

Matsuzawa, T ;

Sang, BS ;

Konagai, M .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :187-193

[3] Growth of boron-doped ZnO thin films by atomic layer deposition [J].

Sang, B ;

Yamada, A ;

Konagai, M .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) :19-26

[4] Highly stable ZnO thin films by atomic layer deposition [J].

Sang, BS ;

Yamada, A ;

Konagai, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A) :L1125-L1128

[5] Solution using a codoping method to unipolarity for the fabrication of p-type ZnO [J].

Yamamoto, T ;

Katayama-Yoshida, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2B) :L166-L169

[6] Preparation of boron-doped ZnO thin films by photo-atomic layer deposition [J].

Yamamoto, Y ;

Saito, K ;

Takahashi, K ;

Konagai, M .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 65 (1-4) :125-132

[7] Study of atomic layer epitaxy of zinc oxide by in-situ quartz crystal microgravimetry [J].

Yousfi, EB ;

Fouache, J ;

Lincot, D .

APPLIED SURFACE SCIENCE, 2000, 153 (04) :223-234

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