Inhibition of AlF3•3H2O Impurity Formation in Ti3C2Tx MXene Synthesis under a Unique CoFx/HCl Etching Environment

MXenes, most commonly transition metal carbides, are a family of two-dimensional (2D) materials with promising potential in, among other applications, supercapacitors and batteries. MXenes are synthesized by etching of aluminum or gallium layers in its parent MAX phase directly by HF or by HF in situ formation using a fluoride salt and strong acid. A commonly undesired byproduct of MXene synthesis is AlF3 center dot 3H(2)O. To relieve MXenes from AlF3 center dot 3H(2)O impurity, it is important to elucidate the factors that drive its formation. Here, we dually deduce the conditions that lead to AlF3 center dot 3H(2)O formation while exploring etching with cobalt fluorides (CoF2/CoF3). Previously uncharacterized, etching with cobalt fluorides offers a forthright method to etch MXenes while intercalating cobalt cations. The influence of this etching environment and AlF3 center dot 3H(2)O formation on MXene's structure, morphology, and surface bonding is investigated. Ionic strength of solution used for etching is found to be a critical driving factor in the formation of AlF3 center dot 3H(2)O impurity formation. Specifically, when the ionic strength falls between similar to 8.5 and 10 M, AlF3 complexation is stable. As a result, Ti3C2Tx MXene phase with AlF3 center dot 3H(2)O impurity is obtained. In contrast, near-pure MXene is the only solid state product when I is smaller than similar to 8.5 M or larger than 10 M. Hence, high purity MXene phase can be synthesized by subtle compositional tuning to manipulate the ionic strength of the etching environment.