InGaAs-InP avalanche photodiodes with dark current limited by generation-recombination

被引：37

作者：

Zhao, Yanli ^{[1
]}

Zhang, Dongdong ^{[1
]}

Qin, Long ^{[2
]}

Tang, Qi ^{[2
]}

Wu, Rui Hua ^{[2
]}

Liu, Jianjun ^{[2
]}

Zhang, Youping ^{[2
]}

Zhang, Hong ^{[2
]}

Yuan, Xiuhua ^{[1
]}

Liu, Wen ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Optoelect Sci & Engn, Wuhan 430074, Peoples R China

[2] Wuhan HuaGong Genuine Opt Tech Co Ltd, Wuhan 430074, Peoples R China

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 09期

关键词：

SINGLE-PHOTON DETECTION; DIODES;

D O I：

10.1364/OE.19.008546

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Separate absorption grading charge multiplication avalanche photodiodes (SAGCM APDs) are widely accepted in photon starved optical communication systems due to the presence of large photocurrent gain. In this work, we present a detailed analysis of dark currents of planar-type SAGCM InGaAs-InP APDs with different thicknesses of multiplication layer. The effect of the diffusion process, the generation-recombination process, the tunneling process and the multiplication process on the total leakage current is discussed. A new empirical formula has been established to predict the optimal multiplication layer thickness of SAGCM APDs with dark current limited by generation-recombination at multiplication gain of 8. (C)2011 Optical Society of America

引用

页码：8546 / 8556

页数：11

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