Magnetic characterization of diluted magnetic semiconductor thin films
被引:41
作者:
Gu, Jian-Jun
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Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R China
Hebei Normal Univ Nationalities, Dept Phys, Chengde 067000, Peoples R ChinaHebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Gu, Jian-Jun
[1
,2
,3
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Liu, Hu
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机构:
Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R ChinaHebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Liu, Hu
[1
,2
]
Qi, Yun-Kai
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Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R China
Hebei Normal Univ Nationalities, Dept Phys, Chengde 067000, Peoples R ChinaHebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Qi, Yun-Kai
[2
,3
]
Xu, Qin
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机构:
Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R ChinaHebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Xu, Qin
[1
,2
]
Zhang, Hai-Feng
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机构:
Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R ChinaHebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Zhang, Hai-Feng
[1
,2
]
Sun, Hui-Yuan
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机构:
Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R ChinaHebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
Sun, Hui-Yuan
[1
,2
]
机构:
[1] Hebei Normal Univ, Coll Phys Sci & Informat Engn, Shijiazhuang 050016, Peoples R China
[2] Key Lab Adv Films Hebei Prov, Shijiazhuang 050016, Peoples R China
[3] Hebei Normal Univ Nationalities, Dept Phys, Chengde 067000, Peoples R China
In studies of weak magnetism in diluted magnetic semiconductor thin films, there is often a significant difficulty in subtracting the background signal arising from the substrate. In the present work, an improved magnetic correction method is proposed. For Al doped ZnO and Fe doped TiO(2) films, the magnetic moment and coercivity of the samples were corrected by the improved method, and the maximum fitting error due to the glass substrate was calculated. The accuracy and rationale of the improved method are discussed and compared with the traditional method. The results show that room temperature ferromagnetism is observed in Fe doped TiO(2) thin films. The ferromagnetism is strongly correlated with the substitution of Ti by Fe in the TiO(2) lattice, which results in a change in the crystal structure and the quality of the crystallization of the TiO(2) films. The changes are responsible for altering ferromagnetism in the films. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3532043]
机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Taiyuan Univ Technol, Coll Chem & Chem Engn, Taiyuan 030024, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Li, Xiao-Li
Xu, Xiao-Hong
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Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Xu, Xiao-Hong
Quan, Zhi-Yong
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Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Quan, Zhi-Yong
Guo, Jun-Feng
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Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Guo, Jun-Feng
Wu, Hai-Shun
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机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Wu, Hai-Shun
Gehring, G. A.
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机构:
Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, EnglandShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Taiyuan Univ Technol, Coll Chem & Chem Engn, Taiyuan 030024, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Li, Xiao-Li
Xu, Xiao-Hong
论文数: 0引用数: 0
h-index: 0
机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Xu, Xiao-Hong
Quan, Zhi-Yong
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h-index: 0
机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Quan, Zhi-Yong
Guo, Jun-Feng
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机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Guo, Jun-Feng
Wu, Hai-Shun
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h-index: 0
机构:
Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China
Wu, Hai-Shun
Gehring, G. A.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, EnglandShanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R China