Analysis of side-wall structure of grown-in twin-type octahedral defects in Czochralski silicon

被引：19

作者：

Ueki, T ^{[1
]}

Itsumi, M

Takeda, T

机构：

[1] NTT Elect Corp, Atsugi, Kanagawa 24301, Japan

[2] NTT, Syst Elect Labs, Atsugi, Kanagawa 24301, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 4A期

关键词：

Czochraiski Si; grown-in defect; octahedral void; TEM; EELS;

D O I：

10.1143/JJAP.37.1667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the ride-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection parr. Our electron energy-loss spectroscopy analyses identified that the side-wail layer includes SiO2.

引用

页码：1667 / 1670

页数：4

共 15 条

[1]

EGERTON RF, 1986, ELECT ENERGY LOSS SP, P370

[2] THE ORIGIN OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SILICON SUBSTRATES [J].

ITSUMI, M ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1940-1943

[3] THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON [J].

ITSUMI, M ;

AKIYA, H ;

UEKI, T ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :5984-5988

[4] Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits [J].

Itsumi, M ;

Akiya, H ;

Ueki, T ;

Tomita, M ;

Yamawaki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :812-817

[5] ORIGIN AND ELIMINATION OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SILICON SUBSTRATE [J].

ITSUMI, M ;

KIYOSUMI, F .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :496-498

[6] Transmission electron microscope observation of ''IR scattering defects'' in As-grown czochralski Si crystals [J].

Kato, M ;

Yoshida, T ;

Ikeda, Y ;

Kitagawara, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (11) :5597-5601

[7] Microstructure observation of ''crystal-originated particles'' on silicon wafers [J].

Miyazaki, M ;

Miyazaki, S ;

Yanase, Y ;

Ochiai, T ;

Shigematsu, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12A) :6303-6307

[8] The direct observation of grown-in laser scattering tomography defects in Czochralski silicon [J].

Nishimura, M ;

Yoshino, S ;

Motoura, H ;

Shimura, S ;

Mchedlidze, T ;

Hikone, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (10) :L243-L246

[9] CRYSTAL-ORIGINATED SINGULARITIES ON SI WAFER SURFACE AFTER SC1 CLEANING [J].

RYUTA, J ;

MORITA, E ;

TANAKA, T ;

SHIMANUKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (11) :L1947-L1949

[10] DEPENDENCE OF THE GROWN-IN DEFECT DISTRIBUTION ON GROWTH-RATES IN CZOCHRALSKI SILICON [J].

SADAMITSU, S ;

UMENO, S ;

KOIKE, Y ;

HOURAI, M ;

SUMITA, S ;

SHIGEMATSU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A) :3675-3681

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