Electrically benign behavior of grain boundaries in polycrystalline CuInSe2 films

被引：186

作者：

Yan, Yanfa ^{[1
]}

Jiang, C. -S. ^{[1
]}

Noufi, R. ^{[1
]}

Wei, Su-Huai ^{[1
]}

Moutinho, H. R. ^{[1
]}

Al-Jassim, M. M. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.99.235504

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The classic grain-boundary (GB) model concludes that GBs in polycrystalline semiconductors create deep levels that are extremely harmful to optoelectronic applications. However, our first-principles density-functional theory calculations reveal that, surprisingly, GBs in CuInSe2 (CIS) do not follow the classic GB model: GBs in CIS do not create deep levels due to the large atomic relaxation in GB regions. Thus, unlike the classic GB model, GBs in CIS are electrically benign, which explains the long-standing puzzling fact that polycrystalline CIS solar cells with remarkable efficiency can be achieved without deliberate GB passivation. This benign electrical character of GBs in CIS is confirmed by our scanning Kelvin probe microscopy measurements on Cu(In,Ga)Se-2 chalcopyrite films.

引用

页数：4

共 31 条

[1] Estimation of diffusion lengths in CuInSe2-based cells using the photocurrent-capacitance method [J].