Improved Efficiency of Light-Emitting Diodes by Plasmonic Nanopatterning of the Charge-Transfer Layer

被引:2
作者
Lin, Lyuye [1 ,2 ]
Krahne, Roman [1 ]
Zaccaria, Remo Proietti [1 ,3 ]
机构
[1] Ist Italiano Tecnol IIT, Via Morego 30, I-16163 Genoa, Italy
[2] Univ Genoa, Dipartimento Chim & Chim Ind, Via Dodecaneso 31, I-16146 Genoa, Italy
[3] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, 1219 Zhongguan West Rd, Ningbo 315201, Peoples R China
关键词
light-emitting diodes; perovskites; Purcell factor; OUTCOUPLING EFFICIENCY; SPONTANEOUS EMISSION; EXTRACTION; ENHANCEMENT; PERFORMANCE;
D O I
10.1002/adom.202200156
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Light-emitting diodes (LEDs) are presently not exploited at their full potential due to a multiple range of detrimental effects, such as generation of local modes, either surface plasmon-like or optical modes, ohmic losses, or total internal reflection caused by refractive index mismatch. Herein, the authors focus on LEDs with layered architectures by investigating the effects of interface nanopatterning occurring in the electron-transport layer on their overall performance. In particular, the integration of photonic nanostructures is investigated, while leaving the optical properties of the emitting material unchanged. The numerical results show that specifically designed nanopatterning can strongly contribute to the enhancement of the Purcell factor, outcoupling efficiency and thereby increase the external quantum efficiency by a factor of 2 with respect to the unpatterned structures. This demonstrates that, as in other light-emission technologies, morphological patterning is a valid strategy to improve the performance of LEDs.
引用
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页数:7
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